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ALD atomic layer deposition equipment
Solar ALD atomic layer deposition is a kind of equipment that generates deposition film AL2O3 by alternately passing gas precursor TMA and H20 (or TMA and O3) pulses into the reaction chamber and chemically adsorbing on the deposition substrate. It is mainly applied to photovoltaic PERC, TOPCON and other new processes to improve the conversion efficiency of solar cells.
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Product description
Product introduction
Solar ALD atomic layer deposition is a kind of equipment that generates deposition film AL2O3 by alternately passing gas precursor TMA and H20 (or TMA and O3) pulses into the reaction chamber and chemically adsorbing on the deposition substrate. It is mainly applied to photovoltaic PERC, TOPCON and other new processes to improve the conversion efficiency of solar cells.
Main advantages of ALD technology:
1. The precursor is saturated chemisorption to ensure the formation of a large area of uniform film.
2. It can deposit multi-component nano films and mixed oxides
3. The film can be generated at low temperature (room temperature to 300 ℃).
4. The thickness of the film can be simply and accurately controlled by controlling the number of reaction cycles to form a film with the thickness accuracy of the atomic layer.
5. It can be widely applied to substrates of various shapes.
ALD3.0 Advantages of ALD in High Efficiency Battery Application
ALD3. Industrialized application of technology in high-efficiency battery
Atomic level thin film deposition technology is very suitable for high-efficiency battery passivation applications
Maturity of batch ALD equipment greatly reduces production costs
Strong adaptability to new battery technology
ALD is active in developing new film materials
The process gas enters the chamber and is discharged before entering the pretreatment device, which can effectively handle the TMA that has not been fully reacted, prevent dust particles from polluting the vacuum pump, improve the service life of the pump, reduce potential safety hazards and ensure the start-up rate.
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