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ALD Atomic Layer Deposition
Atomic laver deposition system can produce high guality thin-film. by using our advanced equipment which is more steady and reliable. Application example:High-K gate oxide, storage capacitive dielectrics,medium to high aspect ratio diffusion barriers for copper interconnects, 0LED pinhole-less passivation layers, high uniform WEWS coatings,Nano porous structure coatings, spectialty fiber doping, solar cells,flat panel display,optica film,several kinds ofother specialstructure Nano-film.
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Product description
Atomic laver deposition system can produce high guality thin-film. by using our advanced equipment which is more steady and reliable. Application example:High-K gate oxide, storage capacitive dielectrics,medium to high aspect ratio diffusion barriers for copper interconnects, 0LED pinhole-less passivation layers, high uniform WEWS coatings,Nano porous structure coatings, spectialty fiber doping, solar cells,flat panel display,optica film,several kinds ofother specialstructure Nano-film.
■Advantage
Advanced control system: which combines thetechnical formula, parameter setting, permissionssetting, interlock alarm, status monitoring and othefunctions all in one system.
Technical advantages
◆ Support multiple process routes;
◆ Low power consumption of equipment;
◆ Small occupied space of equipment;
◆ High equipment stability, less mechanical movement, and more stable and reliable equipment operation;
◆ High equipment capacity;
◆ The tail gas has been pretreated;
◆ The machine is easy to maintain, with a long maintenance period of more than half a year;
◆ The equipment has taken necessary measures to protect the dry pump, and the maintenance cycle of the pump is longer.
◆ The equipment has good film forming quality and good density uniformity;
Types ofthin-film deposition
Simple substance: Co, Cu,Ta,Ti, W,Ge, Pt,Ru, Ni,Fe...Nitrides:TiN, SiN,AIN,TaN,ZrN,HfN,WN ..
Oxide:TiO2HO2.SiO2 ZnO ZrO2 A2031a203SnO2
Othercompounds:GaAs.AIPInPGaPInAs,LaHfxOv,SrTiO3.SrTaO6.
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