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Web:www.wxsytech.com
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Low pressure diffusion
The equipment uses a fully enclosed pressure diffusion process (completely isolated from external environment tail interference, ensuring full control over process quality; it also incorporates an exhaust gas treatment system for enhanced safety). Doping is performed in a high‑temperature zone, creating a PN junction on the silicon surface.
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Product description
Already obtained national authorization for "invention patents": CN202410153736.6
Product Function
The equipment uses a fully enclosed pressure diffusion process (completely isolated from external environment tail interference, ensuring full control over process quality; it also incorporates an exhaust gas treatment system for enhanced safety). Doping is performed in a high‑temperature zone, creating a PN junction on the silicon surface.
Product Specifications
| Equipment specifications | Standard value |
|---|---|
| Loading volume | Boron diffusion: M10: 2,880 pcs/tube Boron diffusion: G12: 2,200 pcs/tube Phosphorus diffusion: M10: 1680 pcs/tube Phosphorus diffusion: G12: 1400 pcs/tube |
| Size | Boron expansion: 10,980 mm × 2,620 mm × 4,700 mm Phosphorus expansion: 10,620 mm × 2,530 mm × 4,700 mm |
Product Advantages
- Huge output, PE similar boat design
- Paddle design, Over 130kg load‑bearing
- Special materials and structural design are adopted for furnace mouth sealing
- New air inlet and outlet method, good consistency in sheet resistance
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