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ALD

Solar ALD Atomic Layer Deposition. This equipment utilizes alternating pulses of gas‑phase precursors (trimethylaluminum (TMA) and water vapor H₂O (or ozone O₃)) into the reaction chamber, where they chemisorb and react on the substrate surface to form a deposited Al₂O₃ film. Primarily applied in photovoltaic processes such as PERC (Passivated Emitter and Rear Cell), TOPCon (Tunnel Oxide Passivated Contact), and xBC (Back‑Contact). this technology enhances the conversion efficiency of solar cells by creating ultra‑thin, uniform dielectric films for superior surface passivation and electrical performance.

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Product description

Product Function

Solar ALD Atomic Layer Deposition. This equipment utilizes alternating pulses of gas‑phase precursors (trimethylaluminum (TMA) and water vapor H₂O (or ozone O₃)) into the reaction chamber, where they chemisorb and react on the substrate surface to form a deposited Al₂O₃ film. Primarily applied in photovoltaic processes such as PERC (Passivated Emitter and Rear Cell), TOPCon (Tunnel Oxide Passivated Contact), and xBC (Back‑Contact). this technology enhances the conversion efficiency of solar cells by creating ultra‑thin, uniform dielectric films for superior surface passivation and electrical performance.

Product Specifications

Equipment specifications Standard value
Capacity ≥22,000 pcs/h @ single-sided coating
≥20,000 pcs/h @ double-sided coating
Size 17300mm×6500mm×4100mm

Product Advantages

  • Excellent Uniformity
  • Huge Output
  • Double‑deck design,easy maintenance
  • Special particle trap design,long maintenance cycle

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Address:Factory No.11, 9 Huanpu Road, Xinwu District, Wuxi City, Jiangsu Province

Tel:+86-19952255219

E-mail:fengyang.wang@wxsytech.com

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