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ALD
Solar ALD Atomic Layer Deposition. This equipment utilizes alternating pulses of gas‑phase precursors (trimethylaluminum (TMA) and water vapor H₂O (or ozone O₃)) into the reaction chamber, where they chemisorb and react on the substrate surface to form a deposited Al₂O₃ film. Primarily applied in photovoltaic processes such as PERC (Passivated Emitter and Rear Cell), TOPCon (Tunnel Oxide Passivated Contact), and xBC (Back‑Contact). this technology enhances the conversion efficiency of solar cells by creating ultra‑thin, uniform dielectric films for superior surface passivation and electrical performance.
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Product description
Product Function
Solar ALD Atomic Layer Deposition. This equipment utilizes alternating pulses of gas‑phase precursors (trimethylaluminum (TMA) and water vapor H₂O (or ozone O₃)) into the reaction chamber, where they chemisorb and react on the substrate surface to form a deposited Al₂O₃ film. Primarily applied in photovoltaic processes such as PERC (Passivated Emitter and Rear Cell), TOPCon (Tunnel Oxide Passivated Contact), and xBC (Back‑Contact). this technology enhances the conversion efficiency of solar cells by creating ultra‑thin, uniform dielectric films for superior surface passivation and electrical performance.
Product Specifications
| Equipment specifications | Standard value |
|---|---|
| Capacity | ≥22,000 pcs/h @ single-sided coating ≥20,000 pcs/h @ double-sided coating |
| Size | 17300mm×6500mm×4100mm |
Product Advantages
- Excellent Uniformity
- Huge Output
- Double‑deck design,easy maintenance
- Special particle trap design,long maintenance cycle
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