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SY-G-CVD Graphene CVD Equipment

Avoid a single‑zone temperature profile that is low at both ends and high in the middle, ensuring uniform axial quality along the length of the sample.

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Product description

Device Name SY‑G‑CVD Graphene CVD Equipment
Heating method Resistance wire / Alloy heating (silicon carbide rods available for up to 1100°C)
Number of temperature zones Three independent temperature zones (expandable; layout easily reconfigured to four or five zones)
Maximum temperature 1000℃ / 1100℃ / 1200℃ available (graphene typically operates at 1000–1080℃)
Constant-Temperature Zone (Single Zone) 150–250 mm, with a three-zone superimposed effective average temperature range of 300–600 mm.
Temperature uniformity (central region) ±1 °C (@1000 °C isothermal section)
Temperature control accuracy ±0.5 ℃
Quartz tube specifications Φ80 / Φ100 / Φ150mm / Φ200 (effective aperture as per requirement)
Work atmosphere Pre-mixed gas mixture of Ar / H₂ / CH₄ / C₂H₂, equipped with an MFC mass flow meter.
Vacuum system Mechanical pump, ultimate vacuum ≤ 10 Pa (optional molecular pump unit)
Work stress At atmospheric pressure or slightly positive pressure (LPCVD low-pressure mode optional)

Three independent PID temperature control sections

Avoid a single‑zone temperature profile that is low at both ends and high in the middle, ensuring uniform axial quality along the length of the sample.

High-purity quartz reaction tube

Low metallic impurity precipitation reduces point defects in graphene.

Flexible air circuit configuration

Supports CH₄/H₂/Ar and premixed carbon sources, and is compatible with single-layer, double-layer, and few-layer control experiments.

Upgradable LPCVD

Optional molecular pump assembly and pressure control valve enable low-pressure growth (resulting in larger grains).

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Address:Factory No.11, 9 Huanpu Road, Xinwu District, Wuxi City, Jiangsu Province

Tel:+86-19952255219

E-mail:fengyang.wang@wxsytech.com

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