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SY-G-CVD Graphene CVD Equipment
Avoid a single‑zone temperature profile that is low at both ends and high in the middle, ensuring uniform axial quality along the length of the sample.
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Product description
| Device Name | SY‑G‑CVD Graphene CVD Equipment |
|---|---|
| Heating method | Resistance wire / Alloy heating (silicon carbide rods available for up to 1100°C) |
| Number of temperature zones | Three independent temperature zones (expandable; layout easily reconfigured to four or five zones) |
| Maximum temperature | 1000℃ / 1100℃ / 1200℃ available (graphene typically operates at 1000–1080℃) |
| Constant-Temperature Zone (Single Zone) | 150–250 mm, with a three-zone superimposed effective average temperature range of 300–600 mm. |
| Temperature uniformity (central region) | ±1 °C (@1000 °C isothermal section) |
| Temperature control accuracy | ±0.5 ℃ |
| Quartz tube specifications | Φ80 / Φ100 / Φ150mm / Φ200 (effective aperture as per requirement) |
| Work atmosphere | Pre-mixed gas mixture of Ar / H₂ / CH₄ / C₂H₂, equipped with an MFC mass flow meter. |
| Vacuum system | Mechanical pump, ultimate vacuum ≤ 10 Pa (optional molecular pump unit) |
| Work stress | At atmospheric pressure or slightly positive pressure (LPCVD low-pressure mode optional) |
Three independent PID temperature control sections
Avoid a single‑zone temperature profile that is low at both ends and high in the middle, ensuring uniform axial quality along the length of the sample.
High-purity quartz reaction tube
Low metallic impurity precipitation reduces point defects in graphene.
Flexible air circuit configuration
Supports CH₄/H₂/Ar and premixed carbon sources, and is compatible with single-layer, double-layer, and few-layer control experiments.
Upgradable LPCVD
Optional molecular pump assembly and pressure control valve enable low-pressure growth (resulting in larger grains).
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